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2 edition of Ion bombardment induced damage and annealing in Si. found in the catalog.

Ion bombardment induced damage and annealing in Si.

Boudjemaa Zeroual

Ion bombardment induced damage and annealing in Si.

by Boudjemaa Zeroual

  • 32 Want to read
  • 9 Currently reading

Published by University of Salford in Salford .
Written in English


Edition Notes

PhD thesis, Electrical Engineering.

SeriesD92740
ID Numbers
Open LibraryOL19960931M

It is shown that the degradation of the C‐V properties of the SiO 2 /Si interface caused by low‐energy ion bombardment may be completely removed by annealing to temperatures of °C or higher. The low‐energy ion bombardment, however, also causes damage to the dielectric strength of the SiO damage only partially anneals out, even at the highest annealing temperatures. Chen, M. Maekawa, A. Kawasuso, S. Sakai, and H. Naramoto, “ Annealing process of ion-implantation-induced defects in ZnO: Chemical effect of the ion species ion bombardment often leads to the formation of extended defects, such as stacking faults and/or dislocation loops, in addition to the simple defects. a substantial damage.

Topics: 11M - Material degradation, corrosion, fracture mechanics, 20K - Solid-state physics, 11F - Metallurgy, metallography, Ion bombardment induced damage and annealing in Si [ . Strain induced by He-ion bombardment in μm- thick surface layers of V 3 Si single crystals was studied using the x-ray back-reflection divergent-beam method. The strain matrix of the surface layer was determined. Analysis of the x-ray line broadening as a function of increasing dose showed that the strain varied with the depth distance from the surface.

  The effect of ion-beam annealing for implantation-induced damage in single-crystalline 4H silicon carbide has been studied. Four sets of samples, implanted with two types of ions (C or Si) and two different damage levels (complete or incomplete amorphization), were prepared to investigate the influence of damaging conditions. The damaged samples were irradiated with a 3-MeV Ge ion beam .   Fe 74 Cu 1 Nb 3 Si 16 B 6 amorphous metallic alloy is investigated after ion irradiation by keV N + and MeV Au ions. The depth-profiles of the radiation damage were calculated by the SRIM code. Applicability of transmission and conversion electron Mössbauer effect measurements to distinguish between the bulk and surface radiation damage is demonstrated by using different.


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Ion bombardment induced damage and annealing in Si by Boudjemaa Zeroual Download PDF EPUB FB2

Maxime Darnon, Nicolas Posseme, in Plasma Etching Processes for CMOS Devices Realization, Selectivity issues with thin SiO 2 and silicon recess. Ion bombardment plays a key role in plasma processing since their energies generate directional chemical ion-induced etching reactions, leading to etch product formation and desorption or even direct sputtering of the material.

Select Ion-beam induced sequential epitaxy of α, β and γ-FeSi2 in Si () at °C Book chapter Full text access Ion-beam induced sequential epitaxy of α, β and γ-FeSi 2 in Si () at °C. Sheet resistance measurements on polycrystalline films of seven transition‐metal silicides have been used to study the production of damage by Ar + ‐ion bombardment.

The sensitivity of the compounds to bombardment, as measured by the relative increase in resistance for a given ion dose, increases in the following order: Pd 2 Si, Pt 2 Si, PdSi, Ni 2 Si, PtSi, NiSi, NiSi by:   During the direct-PECVD SiN x process, considerable ion bombardment on the ALD-Al 2 O 3 films occurs, introducing large amounts of plasma damage [27,28].

However, in mw-PECVD, the plasma is excited outside the deposition chamber and the Al 2 O 3 films are not directly contacting with the plasma, thus significantly reducing the plasma-induced Cited by: 4.

The amorphization of crystalline Si() and Ge() Ion bombardment induced damage and annealing in Si. book induced by low-energy ( eV to 5 keV) Ar + ion bombardment is studied by means of low-energy electron diffraction (LEED) and electron energy-loss spectroscopy (EELS).

The fluences required for the transition from the crystalline into the amorphous state are derived for the (reconstructed) topmost surface layer and the Cited by:   The authors investigate the effects of microwave annealing (MWA) on the recovery of plasma process-induced ion-bombardment damage in Si substrates.

For damage creation, Ar discharges by a capacitively coupled plasma etcher are used. For damage repairing, the MWA or a rapid thermal annealing (RTA) are conducted. The authors employ spectroscopic ellipsometry (SE). Lattice disorder induced by ion bombardment of SiC surfaces has been studied using Raman spectroscopy.

After bombardment with 15 keV H +, D + or He + to fluences of 10 19 cm −2 the SiC surface was found to amorphize as indicated by changes in the Raman spectra. Raman studies of the annealing behavior of the damaged surface showed that no. cient dynamic annealing, the damage-buildup behavior be-comes rather complex, typically involving nucleation-limited amorphization.

Damage processes in GaN are also complicated by ion-beam-induced material dissociation,14 Indeed, after amor-phization of GaN, ion bombardment. For bombardment at a temperature at about the critical temperature an extra step, viz. post-bombardment annealing, was needed to ascertain the microstructure of bombarded layer.

Another aspect investigated was the effect of annealing of samples with an ion bombardment-induced amorphous layer on a 6H-SiC substrate. 6 - 1 Chapter 4 Radiation Damage and Annealing in Silicon after Ion Implantation Jozsef Gyulaia, Kevin S. Jonesb, and Peter Petrika a Research Institute for Tech.

Phys. and Matl. Sci., 49, H Budapest, Hungary [email protected], [email protected]   However, damage to the etched-AlGaN(GaN) surfaces and AlGaN/GaN structures due to ion bombardment and expo-sure to plasma is crucial issue in RIE that degrade compre-hensive device performance.

For example, Yatabe et al. clearly indicated that chlorine-based RIE-induced damage significantly increased the interface trap states between.

Epitaxial regrowth of an amorphous Si layer on a Si crystal held at °C is achieved under bombardment with Si, Kr, or Xe ions. Channeling measurements with MeV He ions show the regrowth proceeds from the amorphous-crystalline interface, and has an initially linear dose dependence.

The annealing beam, however, introduces additional damage centered at or beyond the ion range. The effects of neutron ([inverted lazy s] K) and ion bombardment ([inverted lazy s]85 K), and subsequent isochronal annealing, on the near-infrared transmittance of Si x Ge 1-x alloys (x=,and ) have been investigated and compared to those for similarly bombarded Si and Ge.

Defect absorption bands are observed in all three alloy compositions and can be separated into Ge-like. the damage induced by high-energy ion bombardment. During the spacer and contact etch processes, the exposure of Si surface to the plasma results in lattice damage and contamination problem due to the energetic ion bombard-ment and penetration of the species involved in the processes.

Recently, the junction for contacts becomes. The effects of neutron ([inverted lazy s] K) and ion bombardment ([inverted lazy s]85 K), and subsequent isochronal annealing, on the near‐infrared transmittance of Si x Ge 1−x alloys (x=,and ) have been investigated and compared to those for similarly bombarded Si and Ge.

Defect absorption bands are observed in all three alloy compositions and can be separated into Ge. Abstract. We have investigated by AES the damage induced at a SiO 2 surface by low-energy ion bombardment with He, Ne and Ar ions.

The understoichiometric layer is characterized by the additional SiO x (82 eV) and Si (89 eV) peaks in the SiL 2,3 VV spectrum. The damage is strongly dependent on ion fluence, ion mass and also on the electron beam exposure recieved during Auger analysis. Abstract. The effects of implantation-induced radiation damage on the thermal oxidation of cobalt have been studied.

Bombardment by both Co + self-ions and by Xe + has been studied as a function of ion dose, energy and annealing temperature. A major increase in oxidation was observed for doses of >10 16 Co + cm −2 in agreement with previous studies on Al.

The oxidation behaviour as a. Ion implantation is a low-temperature process by which ions of one element are accelerated into a solid target, thereby changing the physical, chemical, or electrical properties of the target. Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as in materials science research.

The ions can alter the elemental composition of the target (if the ions. The effects of ion bombardment into MgO were investigated by measuring resulting volume changes with a cantilever beam technique and by monitoring the F band absorption induced in the uv region of the spectrum.

Single crystals of MgO were bombarded near 〈〉 with ‐keV argon, which resulted in an expansion of the implanted near‐surface layer due to the ion‐induced lattice damage.

Ion Bombardment Induced Damage in Silicon Carbide Studied by Ion Beam Analytical Methods p Effects of Hydrogen Implantation and Annealing on the Vibrational Properties of 6H-SiC p 4H- and 6H-SiC Rutherford Back Scattering-Channeling Spectrometry: Polytype Finger Printing.

@article{osti_, title = {Ion-induced damage and amorphization in Si}, author = {Holland, O W and White, C W}, abstractNote = {Ion-induced damage growth in high-energy, self-ion irradiated Si was studied using electron microscopy and Rutherford backscattering spectroscopy.

The results show that there is a marked variation in the rate of damage growth, as well as the damage morphology.Ion bombardment induced damage and annealing in Si. Author: Zeroual, Boudjemaa.

ISNI: Awarding Body: University of Salford Current Institution: University of Salford Date of Award: Availability of Full Text: Full text unavailable from EThOS.and with dose 1 10 14 ions/cm2 into Si, respectively.

Keywords: molecular dynamics, kinetic monte carlo, ion implantation, diffusion, dynamic annealing 1 INDRODUCTION Ion Implantation induced dopant and damage distribution is ofmajor process among the silicon technology.

A need for predictive range profile in the area.